No | Part number | Description ( Function ) | Manufacturers | |
1 | T1G6001032-SM | GaN RF Power Transistor T1G6001032-SM 10W, 32V, DC – 6 GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Wideband or narrowband amplifiers • Jammers Product Features • Frequency: DC to 6 GHz • Output Power (P3dB): 10 W Peak at 3.1 GHz • Linear Gain: >17 dB at 3.1 GHz • Operating V |
TriQuint Semiconductor |
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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