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T1G PDF Datasheet

The T1G is Diode ( Rectifier ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
7 T1G
Diode ( Rectifier )

American Microsemiconductor
American Microsemiconductor
pdf
6 T1G4005528-FS
GaN RF Power Transistor

T1G4005528-FS Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Avionics • Wideband or narrowband amplifiers 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor www.DataSheet.net/ 2 5.461 10.992 Product Features • Frequency: DC to 3.5 GHz • Linear Gain: >15 dB at 3.5 GHz • Operat

TriQuint Semiconductor
TriQuint Semiconductor
pdf
5 T1G6000528-Q3
GaN RF Power Transistor

T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and commercial communication systems –– General Purpose RF Power –– Jammers –– Radar –– Professional radio systems –– WiMAX –– Wideband amplifiers –– Test instrumentation –– Cellular infrastructure Available Package Product Features �

TriQuint Semiconductor
TriQuint Semiconductor
pdf
4 T1G6001032-SM
GaN RF Power Transistor

T1G6001032-SM 10W, 32V, DC – 6 GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Wideband or narrowband amplifiers • Jammers Product Features • Frequency: DC to 6 GHz • Output Power (P3dB): 10 W Peak at 3.1 GHz • Linear Gain: >17 dB at 3.1 GHz • Operating V

TriQuint Semiconductor
TriQuint Semiconductor
pdf
3 T1G6001528-Q3
18 W GaN RF Power Transistor

T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features • • • • • Frequency: DC to 6 GHz Output Power (P3dB): 18 W at 6 GHz Linear Gain: >10 dB at 6 GHz Operati

TriQuint Semiconductor
TriQuint Semiconductor
pdf
2 T1G6001528-Q3
GaN RF Power Transistor

T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features • • • • • Frequency: DC to 6 GHz Output Power (P3dB): 18 W at 6 GHz Linear Gain: >10 dB at 6 GHz Operati

TriQuint Semiconductor
TriQuint Semiconductor
pdf

[1]    [2]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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