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T0809NH PDF Datasheet

The T0809NH is (t0805xh / T0809xh) Sensitive Gate Triacs. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 T0809NH
(T0805xH / T0809xH) Sensitive Gate Triacs

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ST Microelectronics
ST Microelectronics
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Recommended search results related to T0809NH

Part No Description ( Function) Manufacturers PDF
T0809DH   (T0805xH / T0809xH) Sensitive Gate Triacs

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ST Microelectronics
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T0809MH   (T0805xH / T0809xH) Sensitive Gate Triacs

ww.datasheet39.comom www.DataSheet4U 4U.com DataSheet 4 U .com ww.datasheet39.comom www.DataSheet4U 4U.com DataSheet 4 U .com www.DataS

ST Microelectronics
ST Microelectronics
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T0809SH   (T0805xH / T0809xH) Sensitive Gate Triacs

ww.datasheet39.comom www.DataSheet4U 4U.com DataSheet 4 U .com ww.datasheet39.comom www.DataSheet4U 4U.com DataSheet 4 U .com www.DataS

ST Microelectronics
ST Microelectronics
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0809LD120   120 Watt / 28V / 1 Ghz LDMOS FET

R.0.2P.991602-BEHRE 0809LD120 120 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD120 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utiliz

GHZ Technology
GHZ Technology
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0809LD30   30 Watt / 28V / 1 Ghz LDMOS FET

R.0.2P.991602-BEHRE 0809LD30 30 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD30 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes g

GHZ Technology
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