Datasheet SIC10A065ND Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SIC10A065ND	SILICON CARBIDE SCHOTTKY DIODE SiC10A065ND SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 10 A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case:	Pan Jit International

SIC10A06 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SIC10A065T	SILICON CARBIDE SCHOTTKY DIODE SiC10A065T SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 10 A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanic	Pan Jit International
SIC10A065ND	SILICON CARBIDE SCHOTTKY DIODE SiC10A065ND SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 10 A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechani	Pan Jit International

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Número de pieza	Descripción	Fabricantes	PDF
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