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Datasheet SI4354DY Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 SI4354DY   N-Channel 30-V (D-S) MOSFET

Si4354DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0165 at VGS = 10 V 0.0185 at VGS = 4.5 V ID (A) 9.5 9.0 FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Gen II Power MOSFET • 100 % Rg Tested APPLICATIONS • High-Si
 Vishay
Vishay		 datasheet SI4354DY pdf

SI435 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SI4356DY

N-Channel 30-V MOSFET

Si4356DY New Product Vishay Siliconix N-Channel 30-V MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.006 @ VGS = 10 V 0.0075 @ VGS = 4.5 V ID (A) 17 14 D TrenchFETr Power MOSFETS D Optimized for Low-Side Synchronous Rectifier Operation D 100 % RG Tested APPLICATION
 Vishay
Vishay		 datasheet pdf - Vishay
SI4355

LOW-CURRENT OOK/(G)FSK SUB-GHZ RECEIVER

Si4355 E A S Y - T O - U S E , L O W - C U R R E N T O O K / ( G ) F S K S U B - G H Z R E C E IV E R Features  Frequency range = 283–960 MHz  Receive sensitivity = –116 dBm  Modulation (G)FSK OOK         Low RX Current = 10 mA
 Silicon Laboratories
Silicon Laboratories		 datasheet pdf - Silicon Laboratories
SI4354DY

N-Channel 30-V (D-S) MOSFET

Si4354DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0165 at VGS = 10 V 0.0185 at VGS = 4.5 V ID (A) 9.5 9.0 FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Gen II Power MOSFET • 100 % Rg Tested APPL
 Vishay
Vishay		 datasheet pdf - Vishay


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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