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STPS30H100CT PDF Datasheet

The STPS30H100CT is (stps30h100cw/ct) High Voltage Power Schottky Rectifier. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 STPS30H100CT
(STPS30H100CW/CT) HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

® STPS30H100CW/CT HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS s 2 x 15 A 100 V 175 °C 0.67 V K A2 s s s s NEGLIGIBLE SWITCHING LOSSES LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED A2 K A1 A1 K A2

ST Microelectronics
ST Microelectronics
pdf

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Recommended search results related to STPS30H100CT

Part No Description ( Function) Manufacturers PDF
STPS30H100C   High voltage power Schottky rectifier

STPS30H100C High voltage power Schottky rectifier Features ■ Negligible switching losses ■ Low leakage current ■ Good trade off between leakage current and forward voltage drop ■ Low thermal resistance ■ Avalanche capability specified Description Dual center tap Schot

STMicroelectronics
STMicroelectronics
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STPS30H100CW   (STPS30H100CW/CT) HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

® STPS30H100CW/CT HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS s 2 x 15 A 100 V 175 °C 0.67 V K A2 s s s s NEGLIGIBLE SWITCHING LOSSES LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE CURRE

ST Microelectronics
ST Microelectronics
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5SNA0800N330100   IGBT Module

VCE = IC = 3300 V 800 A ABB HiPakTM IGBT Module 5SNA 0800N330100 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power cycling capability • AlN substrate for l

ABB
ABB
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5SNA1200E330100   IGBT Module

VCE = IC = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E330100 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power cycling capability • AlN substrate for

ABB
ABB
datasheet pdf
5SNA1200G330100   IGBT Module

VCE = IC = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • High power density • AlSiC base-plate for high power cycling capability • AlN substrate for lo

ABB
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[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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