No | Part number | Description ( Function ) | Manufacturers | |
8 | STP11NM60 | N-CHANNEL Power MOSFET STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh™Power MOSFET TYPE STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 VDSS 600 V 600 V 600 V 600 V RDS(on) < 0.45 < 0.45 < 0.45 < 0.45 Ω Ω Ω Ω ID 11 A 11 A 11 A 11 A 1 2 3 1 3 2 TYPICAL RDS(on) = 0.4Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 10 |
ST Microelectronics |
|
7 | STP11NM60A | N-CHANNEL Power MOSFET N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh™Power MOSFET TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 n n n n STP11NM60A STP11NM60AFP - STB11NM60A-1 VDSS 600 V 600 V 600 V RDS(on) <0.45Ω <0.45Ω <0.45Ω ID 11 A 11 A 11 A 3 1 2 TYPICAL RDS(on) = 0.4Ω HIGH dv/dt LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 12 TO |
ST Microelectronics |
|
6 | STP11NM60AFP | N-CHANNEL Power MOSFET N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh™Power MOSFET TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 n n n n STP11NM60A STP11NM60AFP - STB11NM60A-1 VDSS 600 V 600 V 600 V RDS(on) <0.45Ω <0.45Ω <0.45Ω ID 11 A 11 A 11 A 3 1 2 TYPICAL RDS(on) = 0.4Ω HIGH dv/dt LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 12 TO |
ST Microelectronics |
|
5 | STP11NM60FD | N-CHANNEL Power MOSFET STP11NM60FD- STB11NM60FD STP11NM60FDFP - STB11NM60FD-1 N-CHANNEL 600V-0.40Ω-11ATO-220/TO-220FP/I2PAK/D2PAK FDmesh™Power MOSFET (with FAST DIODE) TYPE STP11NM60FD STP11NM60FDFP STB11NM60FD STB11NM60FD-1 VDSS 600 600 600 600 V V V V RDS(on) < < < < 0.45Ω 0.45Ω 0.45Ω 0.45Ω ID 11 A 11 A 11 A 11 A 1 3 2 1 3 2 TYPICAL RDS(on) = 0.40Ω HIGH dv/dt A |
ST Microelectronics |
|
4 | STP11NM60FDFP | N-CHANNEL Power MOSFET STP11NM60FD- STB11NM60FD STP11NM60FDFP - STB11NM60FD-1 N-CHANNEL 600V-0.40Ω-11ATO-220/TO-220FP/I2PAK/D2PAK FDmesh™Power MOSFET (with FAST DIODE) TYPE STP11NM60FD STP11NM60FDFP STB11NM60FD STB11NM60FD-1 VDSS 600 600 600 600 V V V V RDS(on) < < < < 0.45Ω 0.45Ω 0.45Ω 0.45Ω ID 11 A 11 A 11 A 11 A 1 3 2 1 3 2 TYPICAL RDS(on) = 0.40Ω HIGH dv/dt A |
ST Microelectronics |
|
3 | STP11NM60FP | N-CHANNEL Power MOSFET STP11NM60 - STP11NM60FP STB11NM60 - STB11NM60-1 N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh™Power MOSFET TYPE STP11NM60 STP11NM60FP STB11NM60 STB11NM60-1 VDSS 600 V 600 V 600 V 600 V RDS(on) < 0.45 < 0.45 < 0.45 < 0.45 Ω Ω Ω Ω ID 11 A 11 A 11 A 11 A 1 2 3 1 3 2 TYPICAL RDS(on) = 0.4Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 10 |
ST Microelectronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |