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STP10NB20FP PDF Datasheet

The STP10NB20FP is N - Channel Enhancement Mode Powermesh MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 STP10NB20FP
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

( DataSheet : ) N-CHANNEL 200V - 0.25 Ω - 10A TO-220/TO-220FP PowerMESH™ MOSFET Table 1. General Features Type STP10NB20 STP10NB20FP VDSS 200 V 200 V RDS(on) < 0.40 Ω < 0.40 Ω ID 10 A 6A STP10NB20 STP10NB20FP Figure 1. Package FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.25 Ω ■ ■ ■ ■ EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VE

ST Microelectronics
ST Microelectronics
pdf

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Recommended search results related to STP10NB20FP

Part No Description ( Function) Manufacturers PDF
STP10NB20   N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

( DataSheet : ) N-CHANNEL 200V - 0.25 Ω - 10A TO-220/TO-220FP PowerMESH™ MOSFET Table 1. General Features Type STP10NB20 STP10NB20FP VDSS 200 V 200 V RDS(on) < 0.40 Ω < 0.40 Ω ID 10 A 6A STP10NB20 STP10NB20FP Figure 1. Package FEATURES SUMMARY ■

ST Microelectronics
ST Microelectronics
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2SA1020   TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications • • • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary

Toshiba Semiconductor
Toshiba Semiconductor
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2SA1020   TO-92MOD Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SA1020 FEATURES Power dissipation PCM : 900 mW (Tamb=25℃) TRANSISTOR (PNP) TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -50 Operating an

ETC
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2SA1020   PNP EPITAXIAL SILICON TRANSISTOR

UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. 1 FEATURES *Low collector saturation voltage: VCE(sat)=-0.5V(max.) (IC=-1A) *High speed switching time: t

Unisonic Technologies
Unisonic Technologies
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2SA1020   One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE

2SA1020 Preferred Device One Watt High Current PNP Transistor Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Power D

ON Semiconductor
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