No | Part number | Description ( Function ) | Manufacturers | |
1 | STE26N50 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR STE26N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE STE26N50 s s V DSS 500 V R DS( on) < 0.2 Ω ID 26 A 4 3 s s s s s s s HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE IRFP450 FOR RATING) VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREME |
STMicroelectronics |
0  1  2  3  4  5  6  7  8 9 |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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