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Datasheet STD1HNC60 Equivalent ( PDF )

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1 STD1HNC60   N-CHANNEL POWER MOSFET

N-CHANNEL 600V - 4Ω - 2A - IPAK/DPAK PowerMesh™II MOSFET TYPE STD1HNC60 s s s s s STD1HNC60 VDSS 600 V RDS(on) <5Ω ID 2A TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED IPAK TO-251 3 2 1 1 3 DESCRIPTION The
ST Microelectronics
ST Microelectronics		 datasheet STD1HNC60 pdf

STD1HN Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
STD1HNC60

N-CHANNEL POWER MOSFET

N-CHANNEL 600V - 4Ω - 2A - IPAK/DPAK PowerMesh™II MOSFET TYPE STD1HNC60 s s s s s STD1HNC60 VDSS 600 V RDS(on) <5Ω ID 2A TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED IPAK TO-251 3 2 1 1
ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
STD1HN60K3

N-CHANNEL POWER MOSFET

STD1HN60K3, STU1HN60K3 N-channel 600 V, 6.7 Ω typ., 1.2 A SuperMESH3™ Power MOSFET in DPAK and IPAK packages Datasheet − production data TAB 3 1 DPAK TAB IPAK 3 2 1 Figure 1. Internal schematic diagram D(2, TAB) Features Order codes VDS STD1HN60K3 600 V STU1HN60K3 RD
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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