| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | ST93C46T | (ST93C4xx) 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM ST93C46A,46C,46T ST93C47C,47T 1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 64 x 16 or 128 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST93C4 |
 ST Microelectronics |
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Recommended search results related to ST93C46T |
| Part No | Description ( Function) | Manufacturers | |
| ST93C46A | (ST93C4xx) 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM ST93C46A,46C,46T ST93C47C,47T 1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 64 x 16 or 128 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE wit |
ST Microelectronics |
|
| ST93C46C | (ST93C4xx) 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM ST93C46A,46C,46T ST93C47C,47T 1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 64 x 16 or 128 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE wit |
ST Microelectronics |
|
| DGB9346 | Diode ( Rectifier ) |
 American Microsemiconductor |
|
| L9346 | QUAD INTELLIGENT POWER LOW SIDE SWITCH ® L9346 QUAD INTELLIGENT POWER LOW SIDE SWITCH QUAD POWER LOWSIDE DRIVER WITH 2 x 5A AND 2 x 3A OUTPUT CURRENT CAPABILITY LOW RDSON TYPICALLY 200mΩ AND 300mΩ @ Tj = 25°C INTERNAL OUTPUT CLAMPING STRUCTURES WITH VFB = 50V FOR FAST INDUCTIVE LOAD CURRENT RECIRCULATION LIMIT |
 STMicroelectronics |
|
| L9346DIE | QUAD INTELLIGENT POWER LOW SIDE SWITCH ® L9346 QUAD INTELLIGENT POWER LOW SIDE SWITCH QUAD POWER LOWSIDE DRIVER WITH 2 x 5A AND 2 x 3A OUTPUT CURRENT CAPABILITY LOW RDSON TYPICALLY 200mΩ AND 300mΩ @ Tj = 25°C INTERNAL OUTPUT CLAMPING STRUCTURES WITH VFB = 50V FOR FAST INDUCTIVE LOAD CURRENT RECIRCULATION LIMIT |
STMicroelectronics |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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