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Datasheet SIHFP460 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | SIHFP460 | Power MOSFET ( Transistor ) IRFP460, SiHFP460
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 29 110 Single
D
FEATURES
500 0.27
• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ea |
 Vishay Siliconix |
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| 3 | SIHFP460A | Power MOSFET ( Transistor ) IRFP460A, SiHFP460A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 105 26 42 Single
D
FEATURES
500 0.27
• Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggednes |
Vishay Siliconix |
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| 2 | SIHFP460LC | Power MOSFET ( Transistor ) IRFP460LC, SiHFP460LC
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
500 VGS = 10 V 120 32 49 Single
D
FEATURES
0.27
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
• • • • • • • •
Ultra Low Gate Charge Reduced Gate Drive Requirement Enhan |
Vishay Siliconix |
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| 1 | SIHFP460N | Power MOSFET ( Transistor ) IRFP460N, SiHFP460N
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 124 40 57 Single
D
FEATURES
500 0.24
• Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt |
Vishay Siliconix |
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