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Datasheet SIB410DK Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 SIB410DK   N-Channel MOSFET

New Product SiB410DK Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.042 at VGS = 4.5 V 30 0.046 at VGS = 2.5 V 0.052 at VGS = 1.8 V ID (A)a 9 9 9 5.7 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET �
 Vishay
Vishay		 datasheet SIB410DK pdf

SIB41 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SIB415DK

P-Channel MOSFET

New Product SiB415DK Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) 0.087 at VGS = - 10 V 0.158 at VGS = - 4.5 V ID (A)a, f -9 - 7.2 Qg (Typ.) 3.5 nC FEATURES • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced Powe
 Vishay
Vishay		 datasheet pdf - Vishay
SIB413DK

P-Channel 20-V (D-S) MOSFET

New Product P-Channel 20-V (D-S) MOSFET SiB413DK Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 0.075 at VGS = - 4.5 V 0.143 at VGS = - 2.5 V ID (A)a, f -9 - 7.8 Qg (Typ.) 4.56 nC FEATURES • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhance
 Vishay
Vishay		 datasheet pdf - Vishay
SIB410DK

N-Channel MOSFET

New Product SiB410DK Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.042 at VGS = 4.5 V 30 0.046 at VGS = 2.5 V 0.052 at VGS = 1.8 V ID (A)a 9 9 9 5.7 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchF
 Vishay
Vishay		 datasheet pdf - Vishay


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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