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Datasheet SI4362DY Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | SI4362DY | N-Channel 30-V (D-S) MOSFET Si4362DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0045 @ VGS = 10 V 0.0055 @ VGS = 4.5 V
ID (A)
20 19
D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested
APPLICATIONS
D DC/DC Converters D |
 Vishay Siliconix |
 |
| 3 | SI4362DY-E3 | N-Channel 30-V (D-S) MOSFET Si4362DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0045 @ VGS = 10 V 0.0055 @ VGS = 4.5 V
ID (A)
20 19
D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested
APPLICATIONS
D DC/DC Converters D |
Vishay Siliconix |
|
| 2 | SI4362DY-T1 | N-Channel 30-V (D-S) MOSFET Si4362DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0045 @ VGS = 10 V 0.0055 @ VGS = 4.5 V
ID (A)
20 19
D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested
APPLICATIONS
D DC/DC Converters D |
Vishay Siliconix |
|
| 1 | SI4362DY-T1E3 | N-Channel 30-V (D-S) MOSFET Si4362DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0045 @ VGS = 10 V 0.0055 @ VGS = 4.5 V
ID (A)
20 19
D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested
APPLICATIONS
D DC/DC Converters D |
Vishay Siliconix |
|
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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