Datasheet SI4172DY Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SI4172DY	N-Channel 30-V (D-S) MOSFET www.DataSheet.co.kr Si4172DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.012 at VGS = 10 V 0.015 at VGS = 4.5 V ID (A)a 15 13 Qg (Typ.) 6.8 nC FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchronous Rectifier Oper	Vishay Siliconix

SI417 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SI4178DY	N-Channel 30-V (D-S) MOSFET Datasheet.es New Product Si4178DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.021 at VGS = 10 V 0.033 at VGS = 4.5 V ID (A) 12a 6 Qg (Typ.) 3.7 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET	Vishay Siliconix
SI4170DY	N-Channel 30-V (D-S) MOSFET New Product N-Channel 30-V (D-S) MOSFET Si4170DY Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0035 at VGS = 10 V 0.0045 at VGS = 4.5 V ID (A)a 30 27 Qg (Typ.) 29 nC SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4170DY-T1-GE3 (Lead (Pb)-free	Vishay
SI4172DY	N-Channel 30-V (D-S) MOSFET Datasheet.es Si4172DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.012 at VGS = 10 V 0.015 at VGS = 4.5 V ID (A)a 15 13 Qg (Typ.) 6.8 nC FEATURES • Halogen-free • TrenchFET® Power MOSFET • Optimized for High-Side Synchr	Vishay Siliconix

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Número de pieza	Descripción	Fabricantes	PDF
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