Datasheet SCT30N120 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SCT30N120	Silicon carbide Power MOSFET SCT30N120 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ = 150 °C) in an HiP247™ package Datasheet - production data Features  Very tight variation of on-resistance vs. temperature  Very high operating temperature capability (TJ = 200 °C)  Very fast and robust intrinsic	STMicroelectronics

SCT30N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SCT30N120	Silicon carbide Power MOSFET SCT30N120 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ = 150 °C) in an HiP247™ package Datasheet - production data Features  Very tight variation of on-resistance vs. temperature  Very high operating temperature capability (TJ = 200 °C)  Very fast a	STMicroelectronics

Esta página es del resultado de búsqueda del SCT30N120. Si pulsa el resultado de búsqueda de SCT30N120 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap