No | Part number | Description ( Function ) | Manufacturers | |
1 | SCH1411 | N-Channel Silicon MOSFET Ordering number : ENN8104 SCH1411 N-Channel Silicon MOSFET SCH1411 Features • • • General-Purpose Switching Device Applications Low ON-resistance. High-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Di |
Sanyo Semicon Device |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to SCH1411 |
Part No | Description ( Function) | Manufacturers | |
23HY1411 | Hybrid Stepper Motors HYBRID STEPPING MOTORS ƶ0.39in. ƶ1.10in. ƶ1.38in. ƶ1.53in. ƶ1.65in. ƶ2.22in. 2.25in. ƶ2.36in. ƶ3.35in. 3.39in. (ƶ10mm) (ƶ28mm) (ƶ35mm) (ƶ39mm) (ƶ42mm) (ƶ56.4mm) (57.2mm) (ƶ60mm) (ƶ85mm) (86mm) 23HY SERIES 1.8° Key Features I High Accuracy I Low Inertia |
ETC |
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2SA1411 | Transistor Free Datasheet http:/// |
ETC |
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2SA1411 | Transistor SMD Type Silicon PNP Epitaxia 2SA1411 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Features Very high DC current gain:hFE=500 to 1600. High VEBO Voltage:VEBO=-10V +0.1 2.4-0.1 Unit: mm +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0 |
Kexin |
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2SA1411 | Transistor SMD SMD Type Type Transistors Transistors IC Product specification 2SA1411 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 High VEBO Voltage:VEBO=-10V +0.1 1.3-0.1 Very high DC current gain:hFE=500 to 1600. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 + |
TY Semiconductor |
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2SB1411 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1411 Switching Applications Hammer Drive, Pulse Motor Drive Applications 2SB1411 Unit: mm • High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = |
Toshiba Semiconductor |
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