No | Part number | Description ( Function ) | Manufacturers | |
1 | SCF62160 | Power Solid State Relay S/MON/SCF62160/B/04/12/2003 page 1 /2 F/GB Relais statique monophasé de puissance Power Solid State Relay • Sortie AC synchrone : 24-600VAC-25A • Connection de puissance et de commande :Cosses FASTON • Adapté aux charges résistives • LED de visualisation • 24-600VAC -12A Zero-Cross AC Output. • Power and Control connections by FASTON terminal. • Designed for |
celduc-relais |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to SCF62160 |
Part No | Description ( Function) | Manufacturers | |
BP62160 | SAW Filter 140 MHz Bandpass SAW Filter 140 MHz Bandpass SAW Filter 12 MHz Bandwidth Electrical Characteristics Parameter Center Frequency at 25°C Insertion Loss at fc 1dB Bandwidth 3 dB Bandwidth 40dB Bandwidth Passband Variation Ultimate Rejection Substrate Material A |
Vanlong Technology |
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MD56V62160 | 4-Bank x 1 /048 /576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM E2G1052-17-X1 ¡ Semiconductor MD56V62160/H ¡ Semiconductor This version: Mar. 1998 MD56V62160/H Pr el im in ar y 4-Bank ¥ 1,048,576-Word ¥ 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62160/H is a 4-bank ¥ 1,048,576-word ¥ 16-bit synchronous dynamic RAM, fabrica |
OKI electronic componets |
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MD56V62160E | SYNCHRONOUS DYNAMIC RAM MD56V62160E 4-Bank 1,048,576-Word 16-Bit SYNCHRONOUS DYNAMIC RAM FEDD56V62160E-07 Issue Date: Nov. 18, 2013 DESCRIPTION The MD56V62160E is a 4-Bank 1,048,576-word 16-bit Synchronous dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology. |
LAPIS |
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MD56V62160H | 4-Bank x 1 /048 /576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM E2G1052-17-X1 ¡ Semiconductor MD56V62160/H ¡ Semiconductor This version: Mar. 1998 MD56V62160/H Pr el im in ar y 4-Bank ¥ 1,048,576-Word ¥ 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62160/H is a 4-bank ¥ 1,048,576-word ¥ 16-bit synchronous dynamic RAM, fabrica |
OKI electronic componets |
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MD56V62160M-10TA | SYNCHRONOUS DYNAMIC RAM MD56V62160M-xxTA 4-Bank×1,048,576-Word×16-Bit SYNCHRONOUS DYNAMIC RAM FEDD56V62160MTA-06 Issue Date : Feb. 12, 2014 DESCRIPTION The MD56V62160M-xxTA is a 4-Bank 1,048,576-word 16-bit Synchronous dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology. |
LAPIS |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |