| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | SBR2045CTFP | Super Barrier Rectifier Features • Low Forward Voltage Drop • Excellent High Temperature Stability • Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capability • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Also Available in Green Molding Compound • Halogen and Antimony Free. “Green” Device (Note 3) SBR2045CT SBR2045CTFP 20A SBR® SUPER BARRIER RECTIFIER Mecha |
 Diodes Incorporated |
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Recommended search results related to SBR2045CTFP |
| Part No | Description ( Function) | Manufacturers | |
| SBR2045CT | Super Barrier Rectifier Features • Low Forward Voltage Drop • Excellent High Temperature Stability • Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capability • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Also Available in Green Molding Compound • Halogen and Antim |
Diodes Incorporated |
|
| SBR2045CT | Trench Schottky Barrier Rectifier Features Ultra Low VF=0.36V at IF=3A (25°C) Ultra Low VF=0.48V at IF=10A (25°C) ● Low forward voltage drop, low power losses ● High efficiency operation ● Plastic package has underwriters Laboratory Flammability Classification 94V-0 SBR(X)2045CT Trench Schottky Barrie |
 GOOD-ARK |
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| 2SD2045 | Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid/ Motor and General Purpose) Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2045 120 120 6 6(Pulse10) 1 50(Tc=25°C) 150 –55 to +150 2SD2045 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3A I |
 Sanken electric |
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| 2SD2045 | NPN - PNP Plastic-Encapsulate Transistors Elektronische Bauelemente 2SD2045 NPN - PNP Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURE 40V complementary device Mounting cost and area can be cut in half High hFE MARKING 2045 PACKAGING DIMENSION Packag |
 SeCoS |
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| 2SD2045 | Silicon NPN Darlington Power Transistor INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD2045 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000 |
 INCHANGE |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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