No | Part number | Description ( Function ) | Manufacturers | |
1 | SA9605ASA | THREE PHASE POWER/ENERGY METERING IC WITH INSTANTANEOUS PULSE OUTPUT sames SA9605A THREE PHASE POWER/ENERGY METERING IC WITH INSTANTANEOUS PULSE OUTPUT n FEATURES n Functionally similar to the SA9105E and SA9105F, with reduced number of external components n Output frequency represents the absolute sum of energy on all three phases n Performs one, two or three phase power and energy measurement n Meets the IEC 521/1036 Specification requiremen |
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SA9605 | THREE PHASE POWER/ENERGY METERING IC WITH INSTANTANEOUS PULSE OUTPUT sames SA9605A THREE PHASE POWER/ENERGY METERING IC WITH INSTANTANEOUS PULSE OUTPUT n FEATURES n Functionally similar to the SA9105E and SA9105F, with reduced number of external components n Output frequency represents the absolute sum of energy on all three phases n Performs on |
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SA9605A | THREE PHASE POWER/ENERGY METERING IC WITH INSTANTANEOUS PULSE OUTPUT sames SA9605A THREE PHASE POWER/ENERGY METERING IC WITH INSTANTANEOUS PULSE OUTPUT n FEATURES n Functionally similar to the SA9105E and SA9105F, with reduced number of external components n Output frequency represents the absolute sum of energy on all three phases n Performs on |
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SA9605APA | THREE PHASE POWER/ENERGY METERING IC WITH INSTANTANEOUS PULSE OUTPUT sames SA9605A THREE PHASE POWER/ENERGY METERING IC WITH INSTANTANEOUS PULSE OUTPUT n FEATURES n Functionally similar to the SA9105E and SA9105F, with reduced number of external components n Output frequency represents the absolute sum of energy on all three phases n Performs on |
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BUK9605-30A | TrenchMOS transistor Logic level FET Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features v |
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CGHV96050F1 | Input/Output Matched GaN HEMT CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in com |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |