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S9013LT1 PDF Datasheet

The S9013LT1 is PlastIC Encapsulate Transistors, NPN General Purpose Transistors. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
3 S9013LT1
Plastic Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT¡ª 23 S9013LT1 FEATURES 1. BASE TRANSISTOR£¨NPN £© 2. EMITTER 3. COLLECTOR Power dissipation PCM : 0.3 W£¨ Tamb=25¡æ£© Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J £¬ T s

Jiangsu Changjiang Electronics Technology
Jiangsu Changjiang Electronics Technology
pdf
2 S9013LT1
NPN General Purpose Transistors

S9013LT1 3 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 0.1 100 100 25 40 E=20 Vdc, I E= 0 ) 40 5.0 O 0.1 0.1 0.1 u u u WEITRON http://www.weitron.com.tw S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current

Weitron Technology
Weitron Technology
pdf
1 S9013LT1
NPN Epitaxial Silicon Transistor

S9013LT1 NPN Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. SOT-23 Collector-Emitter Voltage: VCEO= 25V Collector Dissipation: PC=300mW Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Juncti

Elite
Elite
pdf

[1]    

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