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S6E2D55GJA PDF Datasheet

The S6E2D55GJA is MICrocontroller. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 S6E2D55GJA
Microcontroller

S6E2D5 Series 32-bit ARM® Cortex®-M4F FM4 Microcontroller Devices in the S6E2D5 Series are highly integrated 32-bit microcontrollers with high performance and competitive cost. This series is based on the ARM Cortex-M4F Processor with on-chip Flash memory and SRAM. The series has peripheral functions such as graphics engine, display controller, motor control timers, ADCs, an

Cypress Semiconductor
Cypress Semiconductor
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Recommended search results related to S6E2D55GJA

Part No Description ( Function) Manufacturers PDF
S6E2D55G0A   Microcontroller

S6E2D5 Series 32-bit ARM® Cortex®-M4F FM4 Microcontroller Devices in the S6E2D5 Series are highly integrated 32-bit microcontrollers with high performance and competitive cost. This series is based on the ARM Cortex-M4F Processor with on-chip Flash memory and SRAM. The series

Cypress Semiconductor
Cypress Semiconductor
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S6E2D55J0A   Microcontroller

S6E2D5 Series 32-bit ARM® Cortex®-M4F FM4 Microcontroller Devices in the S6E2D5 Series are highly integrated 32-bit microcontrollers with high performance and competitive cost. This series is based on the ARM Cortex-M4F Processor with on-chip Flash memory and SRAM. The series

Cypress Semiconductor
Cypress Semiconductor
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2N6255   RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficien

Microsemi Corporation
Microsemi Corporation
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2N6255   HIGH FREQUENCY TRANSISTOR

2N6255 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Jq = 25°C Derate above 25°C Storage Temperature Symbol vCEO v CBO v EBO ic PD Tstg Value 18 36 4.0 1.0 5.0 28.5 -65 t

Motorola Semiconductors
Motorola Semiconductors
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2N6255   RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficien

Advanced Power Technology
Advanced Power Technology
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[1]    

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