No | Part number | Description ( Function ) | Manufacturers | |
1 | S34ML04G2 | NAND Flash Memory |
Cypress Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to S34ML04G2 |
Part No | Description ( Function) | Manufacturers | |
S34ML04G1 | 3V SLC NAND Flash Distinctive Characteristics Density – 1 Gb/ 2 Gb / 4 Gb Architecture – Input / Output Bus Width: 8-bits / 16-bits – Page size: – x8 = 2112 (2048 + 64) bytes; 64 bytes is spare area – x16 = 1056 (1024 + 32) words; 32 words is spare area – Block size: 64 Pages |
Cypress Semiconductor |
|
S34ML04G1 | (S34ML01G1 - S34ML04G1) SLC NAND Flash Memory Spansion® SLC NAND Flash Memory for Embedded 1 Gb, 2 Gb, 4 Gb Densities: 1-bit ECC, x8 and x16 I/O, 3V VCC S34ML01G1, S34ML02G1, S34ML04G1 Spansion® SLC NAND Flash Memory for Embedded Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifi |
Spansion |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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