No | Part number | Description ( Function ) | Manufacturers | |
1 | S29C51001T | 1 MEGABIT / 5 VOLT CMOS FLASH MEMORY SyncMOS Technologies Inc. S29C51001T/S29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Features s 128Kx8-bit Organization s Address Access Time: 70, 90, 120 ns s Single 5V ± 10% Power Supply s Sector Erase Mode Operation s 8KB Boot Block (lockable) s 512 bytes per Sector, 256 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Program Cycle Time: 20µs (Ma |
SyncMOS |
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Recommended search results related to S29C51001T |
Part No | Description ( Function) | Manufacturers | |
S29C51001B | 1 MEGABIT / 5 VOLT CMOS FLASH MEMORY SyncMOS Technologies Inc. S29C51001T/S29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Features s 128Kx8-bit Organization s Address Access Time: 70, 90, 120 ns s Single 5V ± 10% Power Supply s Sector Erase Mode Operation s 8KB Boot Block (lockable) s 512 bytes pe |
SyncMOS |
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S29C51002B | 2 MEGABIT / 5 VOLT CMOS FLASH MEMORY SyncMOS Technologies Inc. S29C51002T/S29C51002B 2 MEGABIT (262,144 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Features s 256Kx8-bit Organization s Address Access Time: 70, 90, 120, 150 ns s Single 5V ± 10% Power Supply s Sector Erase Mode Operation s 16KB Boot Block (lockable) s 512 b |
SyncMOS |
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S29C51002T | 2 MEGABIT / 5 VOLT CMOS FLASH MEMORY SyncMOS Technologies Inc. S29C51002T/S29C51002B 2 MEGABIT (262,144 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Features s 256Kx8-bit Organization s Address Access Time: 70, 90, 120, 150 ns s Single 5V ± 10% Power Supply s Sector Erase Mode Operation s 16KB Boot Block (lockable) s 512 b |
SyncMOS |
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S29C51004B | (S29C51004T / S29C51004B) 4M-Bit 5-Volt CMOS Flash Memory SyncMOS Technologies Inc. S29C51004T/S29C51004B 4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Features s s s s s s 512Kx8-bit Organization Address Access Time: 70, 90, 120 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 16KB Boot Block (lockable) 1K bytes pe |
SyncMOS |
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S29C51004T | (S29C51004T / S29C51004B) 4M-Bit 5-Volt CMOS Flash Memory SyncMOS Technologies Inc. S29C51004T/S29C51004B 4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Features s s s s s s 512Kx8-bit Organization Address Access Time: 70, 90, 120 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 16KB Boot Block (lockable) 1K bytes pe |
SyncMOS |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |