No | Part number | Description ( Function ) | Manufacturers | |
1 | S2353 | Diode ( Rectifier ) |
American Microsemiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to S2353 |
Part No | Description ( Function) | Manufacturers | |
TGS2353 | DC - 18 GHz High Power GaN SPDT Switch TGS2353 DC – 18 GHz High Power SPDT Switch Applications • High Power Switching Product Features • • • • • • • Frequency Range: DC – 18 GHz Input Power: up to 10 W Insertion Loss: < 1.5 dB Isolation: -30 dB typical Switching Speed: < 35 ns Control Voltages: 0 |
TriQuint Semiconductor |
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2N2353 | (2N2xxx) NPN General Purpose Medium Speed Amplifiers w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c |
Semicoa |
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2SD2353 | Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2353 Power Amplifier Applications 2SD2353 Unit: mm • High DC current gain: hFE = 800 to 3200 • Low collector saturation voltage: VCE (sat) = 0.4 V (typ.) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol |
Toshiba Semiconductor |
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2SK2353 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2353/2SK2354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3. 3. |
NEC |
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AK2353B | Integrated Base Band LSI ( DataSheet : ) |
Asahi Kasei Microsystems |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |