|
|
Datasheet S1PDB174 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | S1PDB174 | Single Phase Bridge Rectifiers Modules S1PDB174
Single Phase Bridge Rectifiers Modules
_ + Type S1PDB174N08 S1PDB174N10 S1PDB174N12 S1PDB174N14 S1PDB174N16 S1PDB174N18 VRSM V 900 1100 1300 1500 1700 1900 VRRM V 800 1000 1200 1400 1600 1800 Dimensions in mm (1mm=0.0394")
M6x10
7
94 80 72 26 26
+
–
15
54 27 6.5
A +
B -
~~
12
25 |  Sirectifier Semiconductors | rectifier |
S1P Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | S1P2655A01 | LINEAR INTEGRATED CIRCUIT LINEAR INTEGRATED CIRCUIT
S1P2655A01/02/03/04/05
INTRODUCTION
HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS 16−DIP
The S1P2655A01, S1P2655A02, S1P2655A03, S1P2655A04 and S1P2655A05 are comprised of saven high voltage, high current NPN darlington transistors arrays with common emitter, open collec  Samsung semiconductor data | | |
| 2 | S1P2655A02 | LINEAR INTEGRATED CIRCUIT LINEAR INTEGRATED CIRCUIT
S1P2655A01/02/03/04/05
INTRODUCTION
HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS 16−DIP
The S1P2655A01, S1P2655A02, S1P2655A03, S1P2655A04 and S1P2655A05 are comprised of saven high voltage, high current NPN darlington transistors arrays with common emitter, open collec Samsung semiconductor data | | |
| 3 | S1P2655A03 | LINEAR INTEGRATED CIRCUIT LINEAR INTEGRATED CIRCUIT
S1P2655A01/02/03/04/05
INTRODUCTION
HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS 16−DIP
The S1P2655A01, S1P2655A02, S1P2655A03, S1P2655A04 and S1P2655A05 are comprised of saven high voltage, high current NPN darlington transistors arrays with common emitter, open collec Samsung semiconductor data | | |
| 4 | S1P2655A04 | LINEAR INTEGRATED CIRCUIT LINEAR INTEGRATED CIRCUIT
S1P2655A01/02/03/04/05
INTRODUCTION
HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS 16−DIP
The S1P2655A01, S1P2655A02, S1P2655A03, S1P2655A04 and S1P2655A05 are comprised of saven high voltage, high current NPN darlington transistors arrays with common emitter, open collec Samsung semiconductor data | | |
| 5 | S1P2655A05 | LINEAR INTEGRATED CIRCUIT LINEAR INTEGRATED CIRCUIT
S1P2655A01/02/03/04/05
INTRODUCTION
HIGH VOLTAGE, HIGH CURRENT DARINGTON ARRAYS 16−DIP
The S1P2655A01, S1P2655A02, S1P2655A03, S1P2655A04 and S1P2655A05 are comprised of saven high voltage, high current NPN darlington transistors arrays with common emitter, open collec Samsung semiconductor data | | |
| 6 | S1PB | High Current Density Surface Mount Glass Passivated Rectifiers S1PB, S1PD, S1PG, S1PJ, S1PK, S1PM
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount Glass Passivated Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
Available
eSMP ® Series
• Ideal for automated placement • Glass passivated chip junction •  Vishay Siliconix rectifier | | |
| 7 | S1PD | High Current Density Surface Mount Glass Passivated Rectifiers S1PB, S1PD, S1PG, S1PJ, S1PK, S1PM
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount Glass Passivated Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
Available
eSMP ® Series
• Ideal for automated placement • Glass passivated chip junction • Vishay Siliconix rectifier | |
| Esta página es del resultado de búsqueda del S1PDB174. Si pulsa el resultado de búsqueda de S1PDB174 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |