Datasheet S-LP2305DSLT1G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	S-LP2305DSLT1G	P-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. 8V P-Channel Enhancement-Mode MOSFET VDS= -8V RDS(ON), [email protected], Ids@"3.5A = 68 mΩ RDS(ON), [email protected], Ids@"3A = 81 mΩ RDS(ON), [email protected], Ids@"2A = 118 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Character	LRC

S-LP2305DSL Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
S-LP2305DSLT1G	P-Channel Enhancement-Mode MOSFET LESHAN RADIO COMPANY, LTD. 8V P-Channel Enhancement-Mode MOSFET VDS= -8V RDS(ON), [email protected], Ids@"3.5A = 68 mΩ RDS(ON), [email protected], Ids@"3A = 81 mΩ RDS(ON), [email protected], Ids@"2A = 118 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resist	LRC

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Número de pieza	Descripción	Fabricantes	PDF
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