No | Part number | Description ( Function ) | Manufacturers | |
1 | S-LBAS70-04LT3G | SCHOTTKY BARRIER DIODE LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION Pl |
Leshan Radio Company |
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5962-88670043X | Electrically Erasable Industry Standard SPLD This is an abbreviated datasheet. Contact a Cypress representative for complete specifications. For new designs, please refer to the PALCE22V10 PALC22V10B Reprogrammable CMOS PAL® Device Features • Advanced second generation PAL architecture • Low power — 90 mA max. stan |
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S-LBAS70-04LT1G | SCHOTTKY BARRIER DIODE LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP C |
Leshan Radio Company |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |