|
|
Datasheet RU2021H Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RU2021H | N-Channel Advanced Power MOSFET Features
• 20V/20A, RDS (ON) =4mΩ (Typ.) @ VGS=10V RDS (ON) =5mΩ (Typ.) @ VGS=4.5V
• Super High Dense Cell Design
• Low RDS(ON)
• Reliable and Rugged
• Lead Free and Green Available
RU2021H
N-Channel Advanced Power MOSFET
MOSFET
Pin Description
SOP-8
Applications
• DC/DC Converter
|  Ruichips | mosfet |
RU2 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RU2 | Silicon And Fast Recovery Rectifiers RoHS
Silicon And Fast Recovery Rectifiers
TYPE
Maximum Maximum Peak Forward
Recurrent Average Surge Current
Peak Forward
Half
Reverse Rectified sine-wave
Voltage Current Superimposed
Maximum Forward Voltage
Maximum
DC
Reverse
Current TA=25 OC
Typical Reverse Recovery
Time
Package Style
T  WEJ rectifier | | |
| 2 | RU2 | Fast-Recovery Rectifier Diodes Sanken electric rectifier | | |
| 3 | RU2 | FAST RECOVERY RECTIFIER DIODES RU2 - RU2Z
PRV : 200 - 800 Volts Io : 1.0 Ampere
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
FAST RECOVERY RECTIFIER DIODES
D2
0.161 (4.1) 0.154 (3.9)
1.00 (25.4) MIN.  EIC discrete Semiconductors rectifier | | |
| 4 | RU20120L | N-Channel Advanced Power MOSFET RU20120L
N-Channel Advanced Power MOSFET
Features
• 20V/120A,
RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =4.2mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design • Reliable and Rugged • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Complian Ruichips mosfet | | |
| 5 | RU20130L | N-Channel Advanced Power MOSFET RU20130L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/130A, RDS (ON) =2.2mΩ(Typ.)@VGS=10V RDS (ON) =4.5mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
TO Ruichips mosfet | | |
| 6 | RU2013H | N-Channel Advanced Power MOSFET RU2013H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/13A, RDS (ON) =13mΩ (Typ.) @ VGS=10V RDS (ON) =16mΩ (Typ.) @ VGS=4.5V RDS (ON) =22mΩ (Typ.) @ VGS=2.5V
• Super High Dense Cell Design
• Low On-Resistance
• Reliable and Rugged
• Lead Free and Green Available
Pin Descript Ruichips mosfet | | |
| 7 | RU2020H | N-Channel Advanced Power MOSFET RU2020H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/20A, RDS (ON) =3.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.8mΩ (Typ.) @ VGS=4.5V RDS (ON) =5.6mΩ (Typ.) @ VGS=2.5V
• Super High Dense Cell Design
• Low RDS(ON)
• Reliable and Rugged
• Lead Free and Green Available
Pin Description Ruichips mosfet | |
| Esta página es del resultado de búsqueda del RU2021H. Si pulsa el resultado de búsqueda de RU2021H se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |