No | Part number | Description ( Function ) | Manufacturers | |
1 | RN2965CT | (RN2961CT - RN2966CT) Transistor Silicon PNP Epitaxial Type RN2961CT~RN2966CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2961CT,RN2962CT,RN2963CT RN2964CT,RN2965CT,RN2966CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.9±0.05 Unit: mm 1.0±0.05 0.15±0.03 0.2±0.03 6 5 4 0.6±0.02 Two devices are incor |
Toshiba |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to RN2965CT |
Part No | Description ( Function) | Manufacturers | |
RN2965 | (RN2961 - RN2966) Transistor Silicon PNP Epitaxial Type RN2961~RN2966 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2961,RN2962,RN2963,RN2964,RN2965,RN2966 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in US6 (ultra super mini type with 6 leads) l With built-in |
Toshiba |
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RN2965FE | (RN2961FE - RN2966FE) Transistor Silicon PNP Epitaxial Type RN2961FE~RN2966FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2961FE,RN2962FE,RN2963FE RN2964FE,RN2965FE,RN2966FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • • Two devices are incorpor |
Toshiba |
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RN2965FS | (RN2961FS - RN2966FS) Transistor Silicon PNP Epitaxial Type RN2961FS~RN2966FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2961FS,RN2962FS,RN2963FS RN2964FS,RN2965FS,RN2966FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 0.1±0.05 0.8±0.05 0. |
Toshiba |
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2SC2965 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2965 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING(se |
SavantIC |
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2SK2965 | Silicon N Channel MOS Type Field Effect Transistor 2SK2965 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2965 Switching Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 0.15 Ω (typ.) z High forward transfer admittance : |Yfs| = 10 S |
Toshiba Semiconductor |
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