| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | RN2909FE | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2907FE~RN2909FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2907FE,RN2908FE,RN2909FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. · · Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing t |
 Toshiba Semiconductor |
|
0 1 2 3 4 5 6 7 8 9 |
Recommended search results related to RN2909FE |
| Part No | Description ( Function) | Manufacturers | |
| RN2909 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2907~RN2909 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2907,RN2908,RN2909 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in US6 (ultra super mini type with 6 leads) l With built-in bias resistors l Simp |
Toshiba Semiconductor |
|
| RN2909AFS | (RN2907AFS - RN2909AFS) Transistor Silicon PNP Epitaxial Type RN2907AFS~RN2909AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2907AFS, RN2908AFS, RN2909AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 0.1±0.05 0.8±0.05 0.1±0.05 0.15±0 |
 Toshiba |
|
| RN2909FS | (RN2907FS - RN2909FS) Transistor Silicon PNP Epitaxial Type RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. 1.0±0.05 Unit: mm • • 0.35 0.35 1.0±0.05 Incorp |
Toshiba |
|
| 2N2909 | (2N2xxx) NPN General Purpose Medium Speed Amplifiers w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c |
 Semicoa |
|
| 2SC2909 | High-Voltage Switching/ AF 60W Predriver Applications datasheet39.com Ordering number:ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast s |
 Sanyo Semicon Device |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
|||