No | Part number | Description ( Function ) | Manufacturers | |
1 | RN1114 | Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications RN1114~RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114,RN1115,RN1116,RN1117,RN1118 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2114~2118 Unit: mm Equivalent Circuit and Bias Resistor |
Toshiba Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
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2SB1114 | Transistor SMD Type PNP Silicon Epitaxial Transistor 2SB1114 Transistors Features World standard miniature package. High DC current gain hFE=135 to 600. Low VCE(sat): VCE(sat)=-0.3V at 1.5A Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage |
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