No | Part number | Description ( Function ) | Manufacturers | |
1 | RMPA2458 | InGaP HBT Low Current Linear Power Amplifier RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Preliminary September 2005 RMPA2458 2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier Features ■ ■ ■ ■ ■ ■ ■ ■ ■ 31.5dB small signal gain 27dBm output power @ 1dB compression 103mA total current at 19dBm modulated power out 2.5% EVM at 19 dBm modulated power |
Fairchild Semiconductor |
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Recommended search results related to RMPA2458 |
Part No | Description ( Function) | Manufacturers | |
2SC2458 | TRANSISTOR (AUDIO AMPLIFIER APPLICATIONS) 2SC2458(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Low Noise Audio Amplifier Applications Unit: mm · High current capability: IC = 150 mA (max) · High DC current gain: hFE = 70~700 · Excellent hFE linearity: hFE (I |
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2SC2458 | NPN Silicon Epitaxial Planar Transistor ST 2SC2458 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configuration |
SEMTECH |
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2SC2458 | NPN EPITAXIAL SILICON TRANSISTOR ************************************************************************************* 2SC2458 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS(TA=25 ) Parameter Symbol Limits Unit Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO V Emitter -Base Volt |
FGX |
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2SC2458 | NPN Silicon Epitaxial Planar Transistor 2SC2458 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. |
Bluecolour |
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