No | Part number | Description ( Function ) | Manufacturers | |
1 | RJP65S06DWT | IGBT ( Insulated Gate Bipolar Transistor ) Preliminary Datasheet RJP65S06DWT/RJP65S06DWA 650V - 100A - IGBT Application: Inverter Features Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25C) High speed Switching Short circuit withstands time (10 s min.) R07DS0823EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S06DWT-80 2 C 3 Wafer: RJP65S06DWA-80 |
Renesas |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to RJP65S06DWT |
Part No | Description ( Function) | Manufacturers | |
RJP65S06DWA | IGBT Preliminary Datasheet RJP65S06DWT/RJP65S06DWA 650V - 100A - IGBT Application: Inverter Features Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25C) High speed Switching Short circuit withstands time (10 s min. |
Renesas |
|
1N6506 | MONOLITHIC AIR ISOLATED DIODE ARRAY 1N6506 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: • • • • HERMETIC CERAMIC PACKAGE Bv > 60V at 10uA Ir < 100nA at 40V C < 4.0 pF 10 2 3 |
Microsemi Corporation |
|
1N6506 | Diode ( Rectifier ) |
American Microsemiconductor |
|
1N6506+JAN | Diode ( Rectifier ) |
American Microsemiconductor |
|
1N6506+JANTX | Diode ( Rectifier ) |
American Microsemiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |