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RJP65S06DWT PDF Datasheet

The RJP65S06DWT is Igbt ( Insulated Gate Bipolar Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 RJP65S06DWT
IGBT ( Insulated Gate Bipolar Transistor )

Preliminary Datasheet RJP65S06DWT/RJP65S06DWA 650V - 100A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25C)  High speed Switching  Short circuit withstands time (10 s min.) R07DS0823EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S06DWT-80 2 C 3 Wafer: RJP65S06DWA-80

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Recommended search results related to RJP65S06DWT

Part No Description ( Function) Manufacturers PDF
RJP65S06DWA   IGBT

Preliminary Datasheet RJP65S06DWT/RJP65S06DWA 650V - 100A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 100 A, VGE = 15 V, Ta = 25C)  High speed Switching  Short circuit withstands time (10 s min.

Renesas
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1N6506   MONOLITHIC AIR ISOLATED DIODE ARRAY

1N6506 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: • • • • HERMETIC CERAMIC PACKAGE Bv > 60V at 10uA Ir < 100nA at 40V C < 4.0 pF 10 2 3

Microsemi Corporation
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