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RJP65S03DWA PDF Datasheet

The RJP65S03DWA is Igbt ( Insulated Gate Bipolar Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 RJP65S03DWA
IGBT ( Insulated Gate Bipolar Transistor )

Preliminary Datasheet RJP65S03DWT/RJP65S03DWA 650V - 30A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C)  High speed Switching  Short circuit withstands time (10 s min.) R07DS0820EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S03DWT-80 2 C 3 1G 1 2 Wafer: RJP65S03DWA

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Part No Description ( Function) Manufacturers PDF
RJP65S03DWT   IGBT

Preliminary Datasheet RJP65S03DWT/RJP65S03DWA 650V - 30A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C)  High speed Switching  Short circuit withstands time (10 s min.)

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