|
|
Datasheet RJP63K2DPP-M0 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | RJP63K2DPP-M0 | N-Channel IGBT Preliminary Datasheet
RJP63K2DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ High speed switching: tr = 60 ns typ, tf = 200 ns typ. Low leak |
Renesas |
RJP63K2DPP Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
RJP63K2DPP-M0 | N-Channel IGBT |
Renesas |
Esta página es del resultado de búsqueda del RJP63K2DPP-M0. Si pulsa el resultado de búsqueda de RJP63K2DPP-M0 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |