Datasheet RJP63F3DPP-M0 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJP63F3DPP-M0	N-Channel IGBT Preliminary Datasheet RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • • Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 μA m	Renesas

RJP63F3DPP Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJP63F3DPP-M0	N-Channel IGBT Preliminary Datasheet RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • • Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak cu	Renesas

Esta página es del resultado de búsqueda del RJP63F3DPP-M0. Si pulsa el resultado de búsqueda de RJP63F3DPP-M0 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap