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RJP60V0DPM-80 PDF Datasheet

The RJP60V0DPM-80 is Igbt ( Insulated Gate Bipolar Transistor ). It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 RJP60V0DPM-80
IGBT ( Insulated Gate Bipolar Transistor )

RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter Features • High breakdown-voltage • Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Short circuit withstand time (6 μs typ.) • Trench gate and thin wafer technology (G6H series) Outline RENESAS Package code: PRSS0003ZD-A (Package name: TO-3PF) 1 2 3 G Pre

Renesas
Renesas
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