No | Part number | Description ( Function ) | Manufacturers | |
1 | RJP60V0DPM-80 | IGBT ( Insulated Gate Bipolar Transistor ) RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter Features • High breakdown-voltage • Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) • Short circuit withstand time (6 μs typ.) • Trench gate and thin wafer technology (G6H series) Outline RENESAS Package code: PRSS0003ZD-A (Package name: TO-3PF) 1 2 3 G Pre |
Renesas |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to RJP60V0DPM-80 |
Part No | Description ( Function) | Manufacturers | |
BP60080 | SAW Filter 70 MHz Bandpass SAW Filter 70 MHz Bandpass SAW Filter 26 MHz Bandwidth Complies with Directive 2002/95/EC (RoHS Compliant) BP60080 Specifications Parameter Center Frequency at 25°C Insertion Loss at fc 1 dB Bandwidth 3 dB Bandwidth 40dB Bandwidth Passband |
Vanlong Technology |
|
MBR60080CT | (MBR60045CT - MBR600100CTR) Schottky Power Diode Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60045CT thru MBR600100CTR Silicon Schottky Diode, 600A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) P |
Naina Semiconductor |
|
MBR60080CT | (MBR60045CT - MBR600100CTR) Silicon Power Schottky Diode Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ |
America Semiconductor |
|
MBR60080CT | Silicon Power Schottky Diode Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR60045CT thru MBR600100CTR VRRM = 45 V - 100 V IF(AV) = 600 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices ha |
GeneSiC |
|
MBR60080CTR | (MBR60045CT - MBR600100CTR) Schottky Power Diode Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60045CT thru MBR600100CTR Silicon Schottky Diode, 600A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) P |
Naina Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |