Datasheet RJP60D0DPE Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJP60D0DPE	N-Channel IGBT Preliminary Datasheet RJP60D0DPE Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)  Gate to emitter voltage rating 30 V  Pb-free	Renesas

RJP60D0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJP60D0DPK	Silicon N Channel IGBT Preliminary Datasheet RJP60D0DPK Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)  Gate to emitter voltage rating	Renesas
RJP60D0DPM	N-Channel IGBT Preliminary Datasheet RJP60D0DPM Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)  Gate to emitter voltage rating	Renesas
RJP60D0DPE	N-Channel IGBT Preliminary Datasheet RJP60D0DPE Silicon N Channel IGBT High Speed Power Switching Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)  Gate to emitter voltage rating	Renesas

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Número de pieza	Descripción	Fabricantes	PDF
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