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RJP30E3DPK-M0 PDF Datasheet

The RJP30E3DPK-M0 is N-channel Power MOSFET / Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 RJP30E3DPK-M0
N-Channel Power MOSFET / Transistor

Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Outline RENESAS Package code: PRSS0004ZH-A (Package name:

Renesas
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