No | Part number | Description ( Function ) | Manufacturers | |
1 | RJP30E3DPK-M0 | N-Channel Power MOSFET / Transistor Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Outline RENESAS Package code: PRSS0004ZH-A (Package name: |
Renesas |
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