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RJL5012DPE PDF Datasheet

The RJL5012DPE is N-channel Power MOSFET / Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 RJL5012DPE
N-Channel Power MOSFET / Transistor

Preliminary Datasheet RJL5012DPE Silicon N Channel MOS FET High Speed Power Switching Features  Built-in fast recovery diode  Low on-resistance RDS(on) = 0.56  typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching R07DS0435EJ0200 (Previous: REJ03G1745-0100) Rev.2.00 Jun 14, 2011 Outline RENESAS Package code: PRSS0004AE-B (Pack

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Recommended search results related to RJL5012DPE

Part No Description ( Function) Manufacturers PDF
RJL5012DPP   Silicon N Channel MOS FET

RJL5012DPP Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 1 23 G Absolute Maximum Ratings

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RJL5012DPP-M0   Silicon N Channel MOS FET

RJL5012DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003A

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