No | Part number | Description ( Function ) | Manufacturers | |
1 | RJL5012DPE | N-Channel Power MOSFET / Transistor Preliminary Datasheet RJL5012DPE Silicon N Channel MOS FET High Speed Power Switching Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching R07DS0435EJ0200 (Previous: REJ03G1745-0100) Rev.2.00 Jun 14, 2011 Outline RENESAS Package code: PRSS0004AE-B (Pack |
Renesas |
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Recommended search results related to RJL5012DPE |
Part No | Description ( Function) | Manufacturers | |
RJL5012DPP | Silicon N Channel MOS FET RJL5012DPP Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 1 23 G Absolute Maximum Ratings |
Renesas |
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RJL5012DPP-M0 | Silicon N Channel MOS FET RJL5012DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003A |
Renesas |
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05012GOF | Silicon Controlled Rectifier |
Microsemi Corporation |
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05012GOF | Silicon Controlled Rectifier |
Microsemi Corporation |
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1N5012A | (1N5008A - 1N5042A) DIODE Free Datasheet http:/// |
New Jersey Semi-Conductor |
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