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Datasheet RJL-001 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1RJL-001Single 10/100 BASE-TX Filtered Connector Module

NUMBER : RD-SDRJL-001 DATE :2003/08/13 -CL(REV:3) Single 10/100 BASE-TX Filtered Connector Module MODEL NO. : RJL-001 Features Fully shielded magnetics protect data from internally generated digital noise Reduces the overall length of the signal path for improved common mode pe
Taimag
Taimag		connector


RJL Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1RJL-001Single 10/100 BASE-TX Filtered Connector Module

NUMBER : RD-SDRJL-001 DATE :2003/08/13 -CL(REV:3) Single 10/100 BASE-TX Filtered Connector Module MODEL NO. : RJL-001 Features Fully shielded magnetics protect data from internally generated digital noise Reduces the overall length of the signal path for improved common mode pe
Taimag
Taimag		connector
2RJL5012DPEN-Channel Power MOSFET, Transistor

Preliminary Datasheet RJL5012DPE Silicon N Channel MOS FET High Speed Power Switching Features  Built-in fast recovery diode  Low on-resistance RDS(on) = 0.56  typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching R07DS0435EJ0200 (Previous: REJ03G17
Renesas
Renesas		mosfet
3RJL5012DPPSilicon N Channel MOS FET

RJL5012DPP Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 1 23 G Absolute Maximum Ratings Item Symbol Drai
Renesas
Renesas		data
4RJL5012DPP-M0Silicon N Channel MOS FET

RJL5012DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: T
Renesas
Renesas		data
5RJL5013DPEN-Channel Power MOSFET, Transistor

Preliminary Datasheet RJL5013DPE Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching R07DS0359EJ0200 (Previous: REJ03G1755-
Renesas
Renesas		mosfet
6RJL5013DPP-E0High Speed Power Switching MOS FET

RJL5013DPP-E0 500 V - 14 A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-2
Renesas
Renesas		data
7RJL5014DPKSilicon N Channel MOS FET High Speed Power Switching

RJL5014DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1798-0100 Rev.1.00 Jun 30, 2009 Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P
Renesas Technology
Renesas Technology		data



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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