Datasheet RJK6015DPM Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	RJK6015DPM	MOS FET Preliminary Datasheet RJK6015DPM 600V - 21A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.315  typ. (at ID = 10.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching R07DS0438EJ0200 (Previous: REJ03G1752-0100) Rev.2.00 Jun 21, 2012 Ou	Renesas

RJK6015 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
RJK6015DPK	Silicon N Channel MOS FET High Speed Power Switching RJK6015DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1536-0200 Rev.2.00 Apr 18, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1. G	Renesas Technology
RJK6015DPM	MOS FET Preliminary Datasheet RJK6015DPM 600V - 21A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.315  typ. (at ID = 10.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching R07DS0438EJ0200 (Previous: REJ03G1752-0100) Rev.2	Renesas

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Número de pieza	Descripción	Fabricantes	PDF
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