No | Part number | Description ( Function ) | Manufacturers | |
1 | RJK6002DPD | Silicon N Channel MOS FET High Speed Power Switching RJK6002DPD Silicon N Channel MOS FET High Speed Power Switching REJ03G1483-0100 Rev.1.00 Nov 09, 2006 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZA-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain 2, 4 1 12 3 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to so |
Renesas Technology |
0  1  2  3  4  5  6  7  8 9 |
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RJK6002DJE | MOS FET Preliminary Datasheet RJK6002DJE 600V - 2A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching R07DS0845EJ0100 Rev.1.00 Jul 05, 2011 Outline RENESAS Pa |
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1N6002 | Axial-Leaded 500 mW Zener Diodes WWW.Microsemi .COM SCOTTSDALE DIVISION 1N5985 thru 1N6031-1, e3 DO-35 Axial-Leaded 500 mW Zener Diodes DESCRIPTION The popular 1N5985 thru 1N6031 series of 0.5 watt Zener Voltage Regulators provides a selection from 2.4 to 200 volts in standard 5% or 10% tolerances as well as |
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1N6002 | 500mW ZENER DIODES 1N5985-1N6031 High-reliability discrete products and engineering services since 1977 500mW ZENER DIODES FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plat |
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