| No | Part number | Description ( Function ) | Manufacturers | |
| 2 | RJK5014DPP | Silicon N Channel MOS FET High Speed Power Switching RJK5014DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1530-0100 Rev.1.00 Apr 17, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1. Gate 2. Drain 3. Source 1 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source vol |
 Renesas Technology |
|
| 1 | RJK5014DPP-E0 | MOS FET RJK5014DPP-E0 500V - 19A - MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.325 typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) G 1 23 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain |
 Renesas |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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