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Datasheet RJK5012DPE Equivalent ( PDF ) |
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1 | RJK5012DPE | Silicon N Channel MOS FET High Speed Power Switching Preliminary Datasheet
RJK5012DPE
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.515 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching REJ03G1487-0300 Rev.3.00 May 12, 2010
Outline
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RJK5012 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
RJK5012DPE | Silicon N Channel MOS FET High Speed Power Switching |
Renesas Technology |
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RJK5012DPP | Silicon N Channel MOS FET High Speed Power Switching |
Renesas Technology |
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RJK5012DPP-E0 | MOS FET |
Renesas |
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