| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | RJK4532DPD | N-Channel Power MOSFET / Transistor Preliminary Datasheet RJK4532DPD 450V - 4A - MOS FET High Speed Power Switching Features Low on-state resistance RDS(on) = 1.9 typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching R07DS0682EJ0100 Rev.1.00 Feb 24, 2012 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 |
 Renesas |
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0 1 2 3 4 5 6 7 8 9 |
Recommended search results related to RJK4532DPD |
| Part No | Description ( Function) | Manufacturers | |
| RJK4532DPH-E0 | High Speed Power Switching MOS FET RJK4532DPH-E0 450V - 4A - MOS FET High Speed Power Switching Features Low on-state resistance RDS(on) = 1.9 typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251) 4 G 1 |
Renesas |
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| 1N4532 | High-speed diodes DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes FEATURES • Hermetically sealed leaded glass SOD68 (DO |
 NXP Semiconductors |
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| 1N4532 | COMPUTER DIODE FEATURES 1N4532 • • • • • 1N4532 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/144 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current, Sine, |
 Microsemi Corporation |
|
| 1N4532 | COMPUTER DIODE Switching FEATURES 1N4532 • • • • • 1N4532 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/144 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current, Sine, |
Microsemi Corporation |
|
| 2SC4532 | NPN Transistor
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 ETC |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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