No | Part number | Description ( Function ) | Manufacturers | |
1 | RJK4006DPD | Silicon N Channel MOS FET RJK4006DPD Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 2, 4 12 3 1 3 REJ03G1547-0100 Rev.1.00 Dec 19, 2008 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to s |
Renesas |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
RJK4006DPP-M0 | High Speed Power Switching Preliminary Datasheet RJK4006DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.69 typ. (ID = 4 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching R07DS0228EJ0100 Rev.1.00 Dec 14, 2010 Outline REN |
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1N4006 | 1A, 800V, Axial Lead Standard Recovery Rectifier MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N4001/D Axial Lead Standard Recovery Rectifiers This data sheet provides information on subminiature size, axial lead mounted rectifiers for general–purpose low–power applications. Mechanical Characteristics � |
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