No | Part number | Description ( Function ) | Manufacturers | |
1 | RJK1526DPE | N-Channel Power MOSFET / Transistor RJK1526DPJ, RJK1526DPE, RJK1526DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G1859-0100 Rev.1.00 Nov 06, 2009 Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L) 4 : PRSS0004AE-B LDPAK(S)-(1) 4 : PRSS00 |
Renesas |
0  1  2  3  4  5  6  7  8 9 |
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RJK1526DPF | N-Channel Power MOSFET / Transistor RJK1526DPJ, RJK1526DPE, RJK1526DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G1859-0100 Rev.1.00 Nov 06, 2009 Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline R |
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RJK1526DPJ | N-Channel Power MOSFET / Transistor RJK1526DPJ, RJK1526DPE, RJK1526DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G1859-0100 Rev.1.00 Nov 06, 2009 Features • Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline R |
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2SK1526 | Silicon N-Channel MOS FET 2SK1526, 2SK1527 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3PL D G 1 2 3 S |
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2SK1526 | Silicon N Channel MOS FET 2SK1526, 2SK1527 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline REJ03G0950-0200 (Previous: |
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