|
|
Datasheet RJK0851DPB Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | RJK0851DPB | Silicon N Channel Power MOS FET RJK0851DPB
80V, 20A, 23m max. Silicon N Channel Power MOS FET Power Switching
Preliminary Datasheet
R07DS0079EJ0200 Rev.2.00
Apr 09, 2013
Functions
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting
Low on-resistance
RDS(on) = 18 m t | Renesas Technology | data |
RJK Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | RJK005N03 | Drive Nch MOS FET
RJK005N03
Transistors
2.5V Drive Nch MOS FET
RJK005N03
zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm)
SMT3
2.9 1.1 0.4
(3)
zFeatures 1) Low On-resistance. 2) Low voltage drive (2.5V drive).
0.8
(2)
(1)
1.6 2.8
0.95 0.95 0.15 1.9
zApplications Switc ROHM Semiconductor data | | |
2 | RJK005N03FRA | Nch 30V 500mA Small Signal MOSFET RJK005N03FRA
Nch 30V 500mA Small Signal MOSFET
VDSS RDS(on)(Max.)
ID PD
30V 580mΩ ±500mA 200mW
lFeatures
1) Low on-resistance 2) Ultra low voltage drive (2.5V drive) 3) AEC-Q101 Qualified
lOutline
SOT-346
SC-59
SMT3
lInner circuit
Datasheet
lApplic ROHM Semiconductor mosfet | | |
3 | RJK0204DPA | Silicon N Channel Power MOS FET Preliminary Datasheet
RJK0204DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210 Power Switching Rev.2.10
Apr 27, 2010
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m Renesas Technology data | | |
4 | RJK0206DPA | Silicon N Channel Power MOS FET Preliminary Datasheet
RJK0206DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev.2.00
Apr 27, 2010
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m Renesas Technology data | | |
5 | RJK0208DPA | Silicon N Channel Power MOS FET Preliminary Datasheet
RJK0208DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200 Power Switching Rev.2.00
Apr 27, 2010
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.6 m Renesas Technology data | | |
6 | RJK0210DPA | Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet
RJK0210DPA
Silicon N Channel Power MOS FET Power Switching
Features
Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G19 Renesas Technology data | | |
7 | RJK0211DPA | Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet
RJK0211DPA
Silicon N Channel Power MOS FET Power Switching
Features
Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.8 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G19 Renesas Technology data | |
Esta página es del resultado de búsqueda del RJK0851DPB. Si pulsa el resultado de búsqueda de RJK0851DPB se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |